Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system

A. Krauze¹ - A. Rudeviċs² - A. Muiżnieks² - A. Sabanskis² - N. Jēkabsons³ - B. Nacke⁴

¹ Institute of Physics, University of Latvia, 32 Miera str., LV-2169 Salaspils-1, Latvia
² Faculty of Physics and Mathematics, University of Latvia, 8 Zeļļu str, LV-1002 Rīga, Latvia
³ Faculty of Information Technologies, Ventspils University College, 101a Inżenieru str., LV-3600 Ventspils, Latvia
⁴ Institute of Electrotechnology, Leibnitz University of Hannover, Wilhelm-Busch-Str. 4, D-30167 Hannover, Germany

Abstract
A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20" crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models. Tables 1, Figs 2, Refs 16.