Influence of DC and AC magnetic fields on melt motion in FZ large Si crystal growth

K. Lācis - A. Muiżnieks - A. Rudeviċs - A. Sabanskis

Faculty of Physics and Mathematics, University of Latvia, 8 Zellu str., LV-1002, Riga, Latvia

Abstract
3D unsteady numerical simulation of the melt motion in floating zone (FZ) large Si single crystal growth process is performed. A system for the growth of 100~mm crystals is considered. Applications of a vertical direct current (DC) magnetic field and a rotating alternating current (AC) magnetic field are considered and compared to a reference case without additional magnetic fields. For all cases the velocity fields i n molten silicon are analyzed. The influence of melt motion on the distribution of normalized resistivity in the grown crystal is discussed. Figs 16, Refs 18.