Electronic edition ISSN 1574-0579

Numerical analysis of the effect of forced convection driven by traveling magnetic field on the crystal growth of silicon y Czochralski technique applications

D. Kehil¹ , B. Hiba¹ , Ab. Nouri¹ , K. Zaidat² , L. Hachani¹

¹ Laboratoire Physique des Matériaux, Université Amar Telidji de Laghouat, BP 37G, Laghouat, 03000, Algérie
² SIMaP -UJF 5266 Domaine Universitaire, BP 75- 38402 Saint Martin d'Hères, France

Abstract
A numerical simulation of silicon crystal growth in a specific Czochralski furnace was carried out. The experimental process involves a melting stage, a holding stage to homogenize the melt by electromagnetic stirring and, finally, a solidification stage by pulling the seed upwards to obtain a single crystal. Enthalpy formulation with moved and deformed mesh technique is used for numerical simulations of the phase-change problems. However, only the stage of solidification under the effect for forced convection driven by an external travelling magnetic field was numerically investigated. The proposed numerical model has demonstrated its effectiveness in predicting the effect of electromagnetic stirring on the solidification process in terms of thermal field, dynamic field and shape and localization of the solidification front. Unfortunately, due to the lack of experimental measurements, the results obtained by numerical simulation have not been yet validated. Tables 1, Figs 7, Refs 14.