Effect of a variable magnetic field on the growth processes and the characteristics of semiconductor single crystals

L. A. Gorbunov

Institute of Physics, Latvian University, Salaspils-1, LV-2169, Latvia

Abstract
The effect of active melt stirring by means of an axial alternating magnetic field on heat and mass transfer at germanium and silicon single crystal growth using the Chokhral'skij technique has been studied experimentally. The possibility of single crystal manufacturing with an increased radial homogeneity of the alloying admixture along the crystal diameter has been demonstrated. The dependence of oxygen concentration in silicon single crystals on the melt stirring intensity has been studied. Figs. 6, tab. 2, refs 11.