Dopant transport during semiconductor crystal growth in space with a steady magnetic field

T. E. Hockenhull¹ - N. Ma²

¹ Department of Mechanical & Aerospace Engineering & Engineering Mechanics University of Missouri, 1870 Miner Circle, Rolla, MO 65409 USA
² Department of Mechanical & Aerospace Engineering North Carolina State University, Campus Box 7910, Rayleigh, NC 27695-7910 USA

Abstract
This paper presents a transient model for dopant segregation during semiconductor crystal growth in space with a steady transverse residual acceleration and with a steady magnetic field. Crystals are being grown in the presence of magnetic fields in space in an attempt to eliminate buoyant convection. Unfortunately, magnetically damped buoyant convection created by a residual acceleration in space is large enough to drive convective mass transport, which produces non-uniformities in the concentration in both the melt and the crystal. Figs 5, Refs 11.