Numerical study of the effects of rotating magnetic fields during VGF growth of 3'' GaAs crystals

M. Hainke - J. Friedrich - G. Müller

Crystal Growth Laboratory, Fraunhofer Institute IISB, Schottkystr. 10, D-91058 Erlangen, Germany

Abstract
The influence of rotating magnetic fields (RMF) on the resulting growth conditions during crystal growth of 3'' GaAs by the Vertical Gradient Freeze (VGF) method is studied. For melts with an aspect ratio H/D ≤ 1 (height/diameter) a range of magnetic field parameters exit, which result in a reduced interface bending and thus a reduced max. thermal stress at the solid-liquid interface. The results indicate, furthermore, that by using a RMF the growth velocity can be increased by a factor 2 under comparable stress conditions as in an optimized standard process (v_G=2.5mm/h) without magnetic field. Tables 2, Figs 5, Refs 8.