Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

K. Lācis¹ - A. Muiżnieks¹ - N. Jēkabsons² - A. Rudeviċs¹ - B. Nacke³

¹ Faculty of Physics and Mathematics, University of Latvia, 8 Zellu str., LV-1002, Riga, Latvia
² Ventspils University College, 101a Inzenieru Street, Ventspils, LV - 3600, Latvia
³ Institute of Electrotechnology, Leibniz University of Hannover, Wilhelm-Busch-Str. 4, D-30167 Hannover, Germany

Abstract
3D unsteady numerical calculations of velocity, temperature and dopant concentration fields in the molten zone in Floating Zone (FZ) Si single crystal growth process using a HF magnetic field are carried out. The recorded fluctuations of physical fields near the crystallization interface are used to estimate the possible fluctuations of the crystal growth rate. Analytical estimation of the amplitude of concentration oscillations due to changing local crystal growth rate is carried out. Figs 4, Refs 6.