Numerical study of the effect of transverse magnetic field on cylindrical and hemispherical CZ crystal growth of silicon

F. Mokhtari^{1, 2} - A. Bouabdallah² - A. Merah² - S. Hanchi³ - A. Alemany⁴

¹ Mouloud Mammeri University, Tizi Ouzou, Algeria }
² LTSE Laboratory, University of Science and Technology USTHB, BP 32 El-Alia, BabEzzouar, Algeria
³ UER Mecanique EMP, BP 17 Bordj ElBahri, Algeria
⁴ Laboratoire EPM, CNRS, Grenoble, France

Abstract
In the present study, three-dimensional numerical results are performed to analyze the effect of a transverse magnetic field on the crystal growth in traditional and new geometries, cylindrical and hemispherical. In addition, we show in our paper that a new three-dimensional approach based on the pressure, which plays an important role, is involved directly in the crystal growth process. To our best knowledge, the evolution of the pressure in the Czochralski melt under a transverse magnetic field has not been studied before. Figs 6, Refs 10.