Simulations of silicon CZ growth in a cusp magnetic field

C.-H. Lin - P.-W. Chen - Ching-Yao Chen

Department of Mechanical Engineering, National Chiao Tung University, Taiwan, Republic of China

Abstract
This study numerically investigates the crystal growth subjected to a cusp direct current magnetic field. The numerical simulations, implemented by means of a commercial CGsim package, are based on the momentum equations coupled with energy transfer and electric current flow equations in the melt zone. Generally, the presence of the magnetic field stabilizes flow patterns of the melt, which is favorable to the processes of crystal growth. Detailed discussions regarding the flow fields and temperature distributions for the cases with various locations of the coils are presented. Determined by the overall factors, such as the interfacial shape and V/G ratio, an intermediate distance of the coils' center above the melt interface is suggested for producing crystals of better quality. Tables 1, Figs 7, Refs 24.