Main Page
About the Journal
Subscription information

Current Issue
Tables of Contents
Author Index


Enhanced VGF growth of single- and multi-crystalline semiconductors using pulsed TMF

N. Dropka - Ch. Frank-Rotsch

Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany

Control of solid/liquid interface morphology, dopant spatial and thermal azimuthal uniformity at the melt boundaries is a key for a success of the vertical gradient freeze (VGF) crystal growth of semiconductors. To assure fast achievement of favorable flow, temperature and concentration patterns during the entire process, we propose electromagnetic stirring by pulsed travelling magnetic fields (TMFs) induced by either side or top KRISTMAG\textregistered heater-magnet-modules (HMMs). The pulsed Lorentz forces were produced by a sinusoidal ac magnitude modulation. Pros and cons of the proposed stirring and interface shaping approach were appraised by 3D CFD and magnetic numerical studies of directional solidification (DS) of multi-crystalline silicon (mc-Si) and VGF-gallium arsenide (GaAs) single crystals at the industrial scale. Figs 6, Refs 5.

Magnetohydrodynamics 51, No. 1, 149-156, 2015 [PDF, 2.48 Mb]

Copyright: Institute of Physics, University of Latvia
Electronic edition ISSN 1574-0579
Printed edition ISSN 0024-998X