Application of vertical magnetic field to FZ growth of silicon single crystals

M. Kimura - H. Yamagishi

Isobe R&D center, Shin-Etsu Handotai Co. Ltd, Isobe 2-13-1, Annaka, Gunma, Japan

Abstract
We applied vertical magnetic fields up to 0.1 T to the FZ growth of <111> oriented silicon single crystals of 80 mm diameter or of 104 mm diameter (VMFZ). The electric resistivity at the center of the crystal significantly increased or decreased with increase of the strength of the magnetic field. Consequently, uniform resistivity profiles along the radial direction were obtained in the magnetic field of 0.05 T for the crystals of 80 mm diameter or of 0.025 T for those of 104 mm diameter, respectively. To consider such phenomena, the heat transfer and melt flow in molten zone were simulated numerically. Figs 7, refs 7.