Numerical modeling of 2D axisymmetric flow under the influence of DC EM field for industrial CZ silicon single crystal growth facilities

A. Krauze¹ - A. Muiżnieks^1,3 - L. Gorbunov² - A. Pedchenko²

¹ Department of Physics, University of Latvia, 8 Zellu str., LV-1002 Riga, Latvia
² Institute of Physics, 32 Miera str., Salaspils-1, LV-2169, Latvia
³ Institute for Electrothermal Processes, 4 Wilhelm-Busch-Str., 30167 Hannover, Germany

Abstract
The Czochralski silicon single-crystal growth method is the most important growth method of silicon monocrystals. The silicon growth processes in CZ facilities are characterized by complex physical phenomena (turbulence, conducting melt under the influence of various magnetic fields, and others), the understanding of which requires numerical modeling. However, the traditional turbulence models require experimental verification, especially if the influence of DC magnetic fields is modeled. Although, results of the numerical modeling of the melt flow in CZ facilities are regularly published in the literature, results of consequent numerical modeling of the melt flow under the influence of DC magnetic fields have not yet been presented for CZ facilities. Therefore, in this article, we present the results of the numerical modeling of the melt flow in a laboratory model of the industrial CZ growth facility and compare the results of the calculations and the temperature measurements in the laboratory model. The influence of two DC magnetic fields, CUSP magnetic field and the axial magnetic field has been modeled. The melt flow in the cases with the rotating crystal and crucible as well as the motionless crystal and crucible have been examined. Tables 6, Figs 16, Refs 49.