Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

A. Sabanskis - K. Surovovs - J. Virbulis

Faculty of Physics and Mathematics, University of Latvia, 8 Zellu str., LV-1002, Riga, Latvia

Abstract
Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment. Figs 12, Refs 22.