Modelling of the influence of electromagnetic force on melt convection and dopant distribution at floating zone growth of silicon

A. Sabanskis¹ - K. Surovovs^{1, 2} - A. Krauze¹ - M. Plāte¹ - J. Virbulis¹

¹ Faculty of Physics and Mathematics, University of Latvia, 8 Zellu str., LV-1002, Riga, Latvia
² Institute of Solid State Physics, University of Latvia, Kengaraga str. 8, LV-1063, Riga, Latvia

Abstract
Numerical modelling of the floating zone process is considered. A local analysis of the electromagnetic field distribution in the vicinity of the external triple point was carried out using the complex vector potential formulation, and the result was included in the calculation of phase boundaries to improve the surface current formulation. 3D hydrodynamic calculations were performed using the open source code library OpenFOAM. The influence of a high-frequency electromagnetic field is shown by comparing phase boundaries, convection in melt and radial resistivity variation profiles. Results are compared with experimental data. Tables 2, Figs 10, Refs 5.